Consider a p-n junction diode when it is forward biased with 2 V. Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels, Efn in the n-side and Efp in the p-side?
Correct Answer :
2 eV
Solution :
The correct option is 2 eV.
To understand why this is the correct answer, let us analyze the behavior of the quasi-Fermi levels in a forward-biased p-n junction diode.
When a p-n junction is in thermal equilibrium (no external applied voltage), the Fermi levels on the n-side () and the p-side () are aligned, meaning there is a single, constant Fermi energy level across the entire device:
When an external forward bias voltage is applied across the p-n junction, the system is no longer in thermal equilibrium. Under these non-equilibrium conditions, the Fermi level splits into two quasi-Fermi levels:
1. which describes the carrier concentration of electrons in the conduction band.
2. which describes the carrier concentration of holes in the valence band.
The applied potential energy difference shifts the energy bands. Specifically, a forward bias of voltage lowers the potential barrier of the junction by an energy equivalent to , where is the elementary charge of an electron. This causes a separation between the quasi-Fermi levels in the neutral regions of the n-side and p-side.
The magnitude of the energy difference between the electron quasi-Fermi level on the n-side () and the hole quasi-Fermi level on the p-side () is directly proportional to the applied bias voltage and is given by the relation:
Given in the problem, the forward bias voltage is:
Substituting this value into our relation, we obtain the energy difference:
Thus, the magnitude of the energy difference between the quasi-Fermi levels is 2 eV.
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