Question Details

Consider the following statements A and B and identify the correct answer:

A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.

B. In a reverse biased pn junction diode, the current measured in (μA), is due to majority charge carriers.

Options

A

A is correct but B is incorrect

B

A is incorrect but B is correct

C

Both A and B are correct

D

Both A and B are incorrect

Show Answer

Correct Answer :

Option A

A is correct but B is incorrect

A is correct but B is incorrect

Solution :

The correct option is A is correct but B is incorrect.

Let us analyze each statement individually based on semiconductor physics:

Statement A: For a solar cell, the I-V characteristics lies in the IV quadrant of the given graph.
A solar cell is a device that generates electrical power from incident light energy. When light falls on the solar cell, electron-hole pairs are generated in the depletion region. Under open-circuit conditions, a photovoltage is developed across the cell, with the p-side becoming positive and the n-side becoming negative. When a load is connected, a photocurrent flows in a direction opposite to the normal forward bias current of the diode. Since the solar cell does not consume power but rather delivers power to the external load, the current is negative while the voltage is positive. Therefore, the I-V characteristic curve of a solar cell lies in the fourth (IV) quadrant of the I-V graph, as shown in the quadrants labeled (I), (II), (III), and (IV) in the image. Thus, Statement A is correct.

Statement B: In a reverse biased pn junction diode, the current measured in (μA), is due to majority charge carriers.
When a pn junction diode is reverse-biased, the external voltage increases the potential barrier across the junction, preventing the flow of majority charge carriers (holes from the p-side and electrons from the n-side). However, a very small current, known as the reverse saturation current, flows due to the drift of minority charge carriers (electrons from the p-side and holes from the n-side) across the junction. In silicon and germanium diodes, this minority carrier current is extremely small and typically measured in microamperes (μA) or nanoamperes (nA). Since this current is due to minority charge carriers rather than majority charge carriers, Statement B is incorrect.

Conclusion:
Statement A is correct and Statement B is incorrect.

Unlock Our Free Library

Access expert-curated educational resources and study materials—completely free.

Discover more resources

You may also like

Mock Tests

View All
  • JEE
  • intermediate
  • 3 hours
  • chemistry, mathematics, physics
  • Proctored

  • JEE
  • intermediate
  • 3 hours
  • chemical engineering, mathematics, physics

Ask AI Tutor
5 left
Q1 View Question & Options
AI Tutor is solving this question...
Reading question context & options...