Consider the following statements A and B and identify the correct answer :

A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.

B. In a reverse biased pn junction diode, the current measured in (μA), is due to majority charge carriers.

**Statement A:** “For a solar‑cell, the I‑V characteristics lies in the IV quadrant of the given graph.”

The image supplied in the question shows an I‑V plot where both voltage (V) and current (I) are positive in the region that the solar cell operates. This is the first quadrant (the “IV quadrant”) of the Cartesian coordinate system. In a photovoltaic cell the generated current flows out of the cell when the terminals are connected to a load, giving a positive current for a positive forward voltage. Hence the curve indeed lies in the IV quadrant, making statement A true.

**Statement B:** “In a reverse‑biased pn‑junction diode, the current measured in (μA), is due to majority charge carriers.”

When a pn‑junction diode is reverse biased, the applied voltage widens the depletion region and prevents majority carriers from crossing the junction. The only charge carriers that can contribute to the reverse‑bias current are the minority carriers that are thermally generated and drift across the depletion region. This reverse‑bias (leakage) current is therefore due to minority carriers, not majority carriers. Consequently, statement B is false.

Since A is true and B is false, the correct option is **“A is correct but B is incorrect.”**