Two statements are given below:

A. When the forward bias voltage across a p-n junction diode increases above a certain threshold voltage, the diode current increases significantly

B. This current is called reverse saturation current.

Choose the correct answer from the options given below:

**Understanding the two statements**

Statement A: “When the forward bias voltage across a p‑n junction diode increases above a certain threshold voltage, the diode current increases significantly.”

Statement B: “This current is called reverse saturation current.”

We need to decide which of these statements are correct.

**Why Statement A is true**

In a p‑n junction diode, applying a forward bias reduces the potential barrier at the junction. Once the applied voltage exceeds the built‑in barrier (typically about 0.6 V for silicon), carriers are injected across the junction and the current rises sharply. This behavior is described by the Shockley diode equation:

$I\; =\; I\_s · (e^\{V\_D/(nV\_T)\} - 1)$

where:

• $I$ is the diode current,
• $I\_s$ is the reverse saturation (leakage) current,
• $V\_D$ is the forward voltage across the diode,
• $n$ is the ideality factor (≈1–2), and
• $V\_T\; =\; kT/q$ is the thermal voltage (~25 mV at room temperature).

Because the exponential term $e^\{V\_D/(nV\_T)\}$ grows very rapidly with $V\_D$, a small increase in forward voltage above the threshold leads to a large increase in current. Hence Statement A correctly captures the diode’s forward‑bias behavior.

**Why Statement B is false**

The term “reverse saturation current” ($I\_s$) refers to the tiny leakage current that flows when the diode is reverse‑biased (i.e., the p‑side is at a lower potential than the n‑side). This current is independent of the applied reverse voltage (up to breakdown) and is caused by minority‑carrier diffusion.

In forward bias, the dominant current is the **forward conduction current** given by the exponential term in the diode equation, not the reverse saturation current. While $I\_s$ appears in the equation, it is only a scaling factor; the large forward current is not called reverse saturation current.

Therefore, the current that “increases significantly” in forward bias is **not** the reverse saturation current, making Statement B incorrect.

**Conclusion**

Statement A accurately describes the behavior of a forward‑biased p‑n junction diode, and Statement B misidentifies the nature of that current. Hence the correct option is:

Statement A is true, but Statement B is false.